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RMQSKA3618DGBA中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
RMQSKA3618DGBA |
功能描述 | 36-Mbit QDR? II SRAM 4-word Burst Architecture (2.0 Cycle Read latency) with ODT |
文件大小 |
399.71 Kbytes |
頁面數(shù)量 |
31 頁 |
生產(chǎn)廠商 | Renesas Technology Corp |
企業(yè)簡稱 |
RENESAS【瑞薩】 |
中文名稱 | 瑞薩科技有限公司官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-4-23 18:37:00 |
人工找貨 | RMQSKA3618DGBA價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
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RMQSKA3618DGBA規(guī)格書詳情
Features
Power Supply
1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
Clock
Fast clock cycle time for high bandwidth
Two input clocks (K and /K) for precise DDR timing at clock rising edges only
Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
Clock-stop capability with ms restart
I/O
Separate independent read and write data ports with concurrent transactions
100 bus utilization DDR read and write operation
HSTL I/O
User programmable output impedance
PLL circuitry for wide output data valid window and future frequency scaling
Data valid pin (QVLD) to indicate valid data on the output
Function
Four-tick burst for reduced address frequency
Internally self-timed write control
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
Package
165 FBGA package (13 x 15 x 1.4 mm)