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NVC080N120SC1

MOSFET ??N??hannel, Silicon Carbide 1200 V, 80 m

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG080N120SC1

SiCN-ChannelMOSFET

FEATURES ·LowEffectiveOutputCapacitance ·UltraLowGateCharge APPLICATIONS ·MainInverters ·GeneralPurposeInverters ·DC/DCConverter ·UPS

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTBG080N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typic

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typic

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG080N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,80m,30A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC080N120SC1

MOSFET??N??hannel,SiliconCarbide1200V,80m

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1A

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1A

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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ON
23+
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100000
全新原裝
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24+
3000
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23+
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2870
絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
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16+
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2500
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2016+
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6528
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23+
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5000
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24+
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6980
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23+
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1004
全新原裝現(xiàn)貨
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24+
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5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
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22+
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5000
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更多NVC080N120SC1供應(yīng)商 更新時間2024-11-28 16:20:00

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