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NTC080N120SC1

MOSFET ??N??hannel, Silicon Carbide 1200 V, 80 m

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1A

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1A

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1D

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG080N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVC080N120SC1

MOSFET??N??hannel,SiliconCarbide1200V,80m

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterc

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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ON/安森美
22+
24000
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ON SEMICONDUCTOR
24+
con
35960
查現(xiàn)貨到京北通宇商城
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THERMISTOR
13+
SMD0805
3000
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THERMISTOR
21+
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9866
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THERMISTOR
23+
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10000
SMD0805
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VATRONICS
22+
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38000
原裝現(xiàn)貨樣品可售
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07
12
0.018
10000
全新原裝現(xiàn)貨 樣品可售
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23+
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38000
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風(fēng)華高科
24+
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35960
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RUILON(瑞隆源)
2021+
徑向引線P=7.5mm
1407
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更多NTC080N120SC1供應(yīng)商 更新時(shí)間2025-2-26 15:00:00

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