首頁 >NTHL080N120SC1>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

NTHL080N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1

Marking：NTHL080N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1A

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1A_V01

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?U

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1A

Marking：NTHL080N120SC1A；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL080N120SC1D

MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG080N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVC080N120SC1

MOSFET??N??hannel,SiliconCarbide1200V,80m

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-247
8110
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ON(安森美)
23+
TO-247
12656
公司只做原裝正品,假一賠十
 詢價
ON/安森美
2447
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ON(安森美)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價
ON(安森美)
6000
詢價
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價
ON(安森美)
22+
NA
8000
原廠原裝現(xiàn)貨
 詢價
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
8000
正規(guī)渠道,只有原裝!
 詢價
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價優(yōu)
 詢價
ON
2022+
TO-247-3LD
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
更多NTHL080N120SC1供應(yīng)商 更新時間2025-2-26 15:14:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多