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NVB60N06

MOSFET – Power, N-Channel, D2PAK 60 V, 60 A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features ?AEC?Q101QualifiedandPPAPCapable?NVB60N06 ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?C

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVB60N06T4G

MOSFET – Power, N-Channel, D2PAK 60 V, 60 A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features ?AEC?Q101QualifiedandPPAPCapable?NVB60N06 ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?C

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVB60N06T4G

Power MOSFET 60 V, 60 A, N??hannel D2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

OM60N06SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

IRF

International Rectifier

P60N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PHB60N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB60N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB60N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB60N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP60N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
ON
2023+
D2PAK-3
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
NEXPERIA/安世
23+
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
ON
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
ON(安森美)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
O
23+
D2PAK
10000
公司只做原裝正品
 詢價(jià)
ON Semiconductor
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
O
23+
D2PAK
6000
原裝正品，支持實(shí)單
 詢價(jià)
ON Semiconductor
2022+
TO-263-3,D2Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
ON/安森美
23+
TO-263-3
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
更多NVB60N06供應(yīng)商 更新時(shí)間2025-1-26 11:06:00

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