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OM60N06SA

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

IRF

International Rectifier

P60N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

PHB60N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB60N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB60N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB60N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP60N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP60N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP60N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PJD60N06

60VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強茂股份有限公司

詳細參數(shù)

  • 型號：

    OM60N06SA

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-258AA
46897
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IR
22+
TO-258AA
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-258AA
8000
只做原裝現(xiàn)貨
 詢價
OMN
24+
N/A
1400
詢價
IR
2017+
TO-257AA
1859
原裝正品,誠信經(jīng)營
 詢價
PHILTPS
16+
QFP
4000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
NXP
23+
BGAQFP
8659
原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢.
 詢價
PHILIPS/飛利浦
QFP
98900
原廠集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-
 詢價
PHILIPS/飛利浦
23+
QFP
98900
原廠原裝正品現(xiàn)貨!!
 詢價
更多OM60N06SA供應(yīng)商 更新時間2025-2-15 9:00:00

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