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NVBG040N120SC1

Marking：NVBG040120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG040N120SC1

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG040N120SC1_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG040N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,40m,60A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG040N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,D2PAK-7

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC040N120SC1

MOSFET??N??hannel,SiliconCarbide1200V,40m

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,BareDie

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON
23+
D2PAK7 (TO-263-7L HV)
100000
全新原裝
 詢價(jià)
onsemi
24+
D2PAK-7
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
ON/安森美
23+
SMD
7848
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價(jià)
ON/安森美
23+
SMD
12116
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
 詢價(jià)
ON(安森美)
23+
D2PAK-7L
9987
公司只做原裝正品,假一賠十
 詢價(jià)
ON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
ON/安森美
22+
SMD
9000
原裝正品,支持實(shí)單!
 詢價(jià)
ON
24+
SMD
10000
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
onsemi
23+
D2PAK-7L
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價(jià)
ON
SMD
30000
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
更多NVBG040N120SC1供應(yīng)商 更新時(shí)間2024-11-28 16:20:00

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