NTH4L080N120SC1中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書

廠商型號	NTH4L080N120SC1
功能描述	Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
文件大小	409.41 Kbytes
頁面數(shù)量	8 頁
生產(chǎn)廠商	ON Semiconductor
企業(yè)簡稱	ONSEMI【安森美半導體】
中文名稱	安森美半導體公司官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-7-19 23:00:00
人工找貨	NTH4L080N120SC1價格和庫存，歡迎聯(lián)系客服免費人工找貨

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provide superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

Features

? 1200 V @ TJ = 175°C

? Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A

? High Speed Switching with Low Capacitance

? 100 Avalanche Tested

? This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb?Free 2LI (on second level interconnection)

Applications

? Industrial Motor Drive

? UPS

? Boost Inverter

? PV Charger