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NGTB15N120IHLWG

Incorporated into the device is a rugged co??ackaged free wheeling diode with a low forward voltage.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB15N120IHLWG

包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 30A 156W TO247-3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB15N120IHRWG

MonolithicFreeWheelingDiode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB15N120IHWG

IGBT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB15N120LWG

Incorporatedintothedeviceisaruggedco??ackagedfreewheelingdiodewithalowforwardvoltage.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RLPGB15N120CT

IGBT

Features 1200V,15A VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOAusingNPTtechnology GeneralDescription NPTIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheati

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

SGB15N120

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB15N120

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter -SMPS ?NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGH15N120RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH15N120RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP15N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP15N120

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter -SMPS ?NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP15N120

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter -SMPS ?NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW15N120

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter -SMPS ?NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW15N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW15N120

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter -SMPS ?NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW15N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW15N120

FASTIGBTINNPT-TECHNOLOGYWITHSOFT,FASTRECOVERYANTI-PARALLELEmConDIODE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

TSG15N120

N-ChannelIGBTwithFRD.

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSG15N120CN

N-ChannelIGBTwithFRD.

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    NGTB15N120IHLWG

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2.2V @ 15V,15A

  • 開關(guān)能量:

    560μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開/關(guān))值:

    -/165ns

  • 測試條件:

    600V,15A,15 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應(yīng)商器件封裝:

    TO-247-3

  • 描述:

    IGBT 1200V 30A 156W TO247-3

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ON
2020+
TO-247
15
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1785
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553
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23+
TO-247
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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22+23+
TO-247
18566
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
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ON
19+
TO-247
30000
原裝正品,價(jià)格優(yōu)
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ON
2018+
TO-247
6000
全新原裝正品現(xiàn)貨,假一賠佰
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ONSEMI
21+
TO-247
6767
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ON/安森美
23+
TO-247-3
10000
公司只做原裝正品
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ON/安森美
21+
TO-247
10000
原裝現(xiàn)貨假一罰十
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ON(安森美)
6000
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更多NGTB15N120IHLWG供應(yīng)商 更新時(shí)間2024-12-24 13:58:00