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首頁>NAND512W3A2DZA6E>芯片詳情
NAND512W3A2DZA6E 集成電路(IC)存儲(chǔ)器 NUMONYX
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品參考屬性
- 類型
描述
- 產(chǎn)品編號(hào):
NAND512W3A2DZA6E
- 制造商:
Micron Technology Inc.
- 類別:
- 包裝:
管件
- 存儲(chǔ)器類型:
非易失
- 存儲(chǔ)器格式:
閃存
- 技術(shù):
閃存 - NAND
- 存儲(chǔ)容量:
512Mb(64M x 8)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁:
50ns
- 電壓 - 供電:
2.7V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
63-TFBGA
- 供應(yīng)商器件封裝:
63-VFBGA(9x11)
- 描述:
IC FLSH 512MBIT PARALLEL 63VFBGA
供應(yīng)商
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