BC817DS

Marking：N3；Package：SOT-26；NPN general purpose double transistor

DESCRIPTION NPNtransistorpairinaSOT457(SC-74)plasticpackage. FEATURES ?Highcurrent(500mA) ?600mWtotalpowerdissipation ?ReplacestwoSOT23packagedtransistorsonsame PCBarea. APPLICATIONS ?Generalpurposeswitchingandamplification ?Push-pullamplifiers ?Multi-

BC817DS

Marking：N3；Package：SOT-363；NPN General Purpose Double Transistor

FEATURES ●Highcurrent(500mA). ●200mWtotalpowerdissipation. ●ReplacestwoSOT323packagedtransistors. OnsamePCBarea. APPLICATIONS ●Generalpurposeswitchingandamplification. ●Puse-pullamplifiers. ●Multi-phasesteppermotordrivers.

BFG520W

Marking：N3；Package：SOT-343N；NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

BFG540

Marking：N37；Package：SOT-143B；NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz

BZX384-B43

Marking：N3；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

BZX384-B43

Marking：N3；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

BZX384-B43

Marking：N3；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

BZX384-B43-Q

Marking：N3；Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

BZX84W-C4V3

Marking：N3；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Wideworkingvoltagerange:nominal2.4Vto75V(E24range) ?Twotoleranceseries:±2and±5 3.Applications ?Gene

BZX84W-C4V3-Q

Marking：N3；Package：SC-70；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Wideworkingvoltagerange:nominal2.4Vto75V(E24range) ?Twotoleranceseries:±2and±5 ?Qualifiedaccordingto

BZX884S-B6V8

Marking：N3；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

DMN3009SSS-13

Marking：N3009SS；Package：SO-8；30V N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,makingitideal forhigh-efficiencypowermanagementapplications. ?MotorControl ?Backlighting ?PowerManagementFunctions ?DC-DCConverters

DMN3030LSS

Marking：N3030LS；Package：SO-8；SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

DMN3190LDWQ-13

Marking：N31；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: ?MotorControl ?DC-DCConverters ?LoadSwitch FeaturesandBenefits ?LowOn-Resistance ?Low

DMN3190LDWQ-7

Marking：N31；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: ?MotorControl ?DC-DCConverters ?LoadSwitch FeaturesandBenefits ?LowOn-Resistance ?Low

DMN33D8LDWQ-13

Marking：N33；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: ?MotorControl ?DC-DCConverters ?Backlighting FeaturesandBenefits ?LowOn-Resistance ?Low

DMN33D8LDWQ-7

Marking：N33；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: ?MotorControl ?DC-DCConverters ?Backlighting FeaturesandBenefits ?LowOn-Resistance ?Low

DMN39M1LK3-13

Marking：N39M1L；Package：TO252；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance ?LowInputCapacitance ?Lead-FreeFinish;RoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/104/200,PPAPcapable, andmanufac

ESD3.3V88D-A

Marking：N3；Package：SOD-882；Transient Voltage Suppressors for ESD Protection

Features 288~412WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsOneunidirectionalI/OLine Lowclampingvoltage Workingvoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD)±30kV(air),±30kV(contact):3.3V~18V IEC61000-4-2(ESD)±15kV(air),±8kV(co

ESD3.3V88DS-A

Marking：N3；Package：SOD-882；Transient Voltage Suppressors for ESD Protection

Features MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 288~400WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsOneUnidirectionalI/OLine Lowclampingvoltage Workingvoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)4A(8/20μs)