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BFG520W

NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520W

Marking:N3;Package:SOT-343N;NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520W

Marking:N3;Package:SOT-343N;RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520W

NPN 9 GHz wideband transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BFG520W/X

Marking:N4;Package:SOT-343N;NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520W/X

Marking:N4;Package:SOT-343N;NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520WSLASHX

Marking:N4;Package:SOT-343N;NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520WSLASHX

Marking:N4;Package:SOT-343N;NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520W-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520W_15

NPN 9 GHz wideband transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

詳細(xì)參數(shù)

  • 型號:

    BFG520W

  • 功能描述:

    射頻雙極小信號晶體管 TAPE-7 TNS-RFSS

  • RoHS:

  • 制造商:

    NXP Semiconductors

  • 配置:

    Single

  • 晶體管極性:

    NPN

  • 最大工作頻率:

    7000 MHz 集電極—發(fā)射極最大電壓

  • VCEO:

    15 V 發(fā)射極 - 基極電壓

  • VEBO:

    2 V

  • 集電極連續(xù)電流:

    0.15 A

  • 功率耗散:

    1000 mW 直流集電極/Base Gain hfe

  • 最大工作溫度:

    + 150 C

  • 封裝/箱體:

    SOT-223

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP(恩智浦)
23+
標(biāo)準(zhǔn)封裝
22048
全新原裝正品/價格優(yōu)惠/質(zhì)量保障
詢價
NXP
23+
SOT343
12000
原裝正品,假一罰十
詢價
NXP
23+
SOT343
27000
全新原裝正品
詢價
PHI
05+
原廠原裝
18051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價
NXP
23+
SOT-343
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
NXP
1822+
SOT-343
6852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
NXP
21+
SOT-343
12588
原裝正品,自己庫存 假一罰十
詢價
NXP
2020+
SOT-343
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
PHILIPS
24+
35200
一級代理/放心采購
詢價
NXP
21+
SOT-343
3000
原裝現(xiàn)貨假一賠十
詢價
更多BFG520W供應(yīng)商 更新時間2025-3-17 23:00:00