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MTD3055VL

M-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTD3055VL

PowerMOSFET12Amps,60Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD3055VL

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055VL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD3055VLG

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTP3055

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3055

N-CHANNEL60V-0.1ohm-12ATO-220STripFETMOSFET

N-CHANNEL60V-0.1?-12ATO-220STripFET?MOSFET ■TYPICALRDS(on)=0.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP3055E

N-CHANNEL60V-0.1ohm-12ATO-220STripFETMOSFET

N-CHANNEL60V-0.1?-12ATO-220STripFET?MOSFET ■TYPICALRDS(on)=0.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP3055E

N-CHANNEL60V-0.1Q-12ATO-220STripFET??MOSFET

N-CHANNEL60V-0.1?-12ATO-220STripFET?MOSFET ■TYPICALRDS(on)=0.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP3055E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3055EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3055V

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTP3055V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3055V

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP3055V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3055VL

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3055VL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. ThisMOSFETfeaturesfasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTP3055VL

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP3055VL

N-Channel60V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTP3055VL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
56000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
ON
23+
TO-252
6893
詢價
ON
24+
N/A
5000
公司存貨
詢價
FAIRCHILD
16+
原裝進(jìn)口原廠原包接受訂貨
2866
原裝現(xiàn)貨假一罰十
詢價
INTERSIL
03/04+
TO252
76
全新原裝100真實現(xiàn)貨供應(yīng)
詢價
FSC
2016+
2.5K/RT
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費(fèi)送樣品!
詢價
ON
2016+
SOT-252
3500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
ON
17+
TO-252
6200
詢價
mot
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
詢價
FAIRCHILD
23+
TO252
7780
全新原裝優(yōu)勢
詢價
更多MTD3055V-HXY供應(yīng)商 更新時間2025-1-7 11:06:00