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MTP3055V

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3055V

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3055V

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTP3055V

Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP3055VL

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3055VL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. ThisMOSFETfeaturesfasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTP3055VL

N-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTP3055VL

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3055VL

Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MUR3055CT

GLASSPASSIVATEDSUPERFASTRECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟南晶恒電子有限責(zé)任公司

MUR3055CT

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Fastswitchingforhighefficiency ?Lowforwardvoltagedrop ?Singlerectifierconstruction ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpolarity

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟南晶恒電子有限責(zé)任公司

MZT3055

SILICONPLANAREPITAXIALTRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

CDIL

Continental Device India Limited

NCE3055

NCEN-ChannelEnhancementModePowerMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NDT3055

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDT3055

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

NDT3055

60VN-Channel

GeneralDescription TheselogiclevelN-ChannelenhancementThisvery highdensityprocessisespeciallytailoredto minimizeon-stateresistanceandprovide superiorswitchingperformance,andwithstandhigh energypulseintheavalancheandcommutation modes.Thesedevicesareparticularly

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

NDT3055L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperfo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDT3055L

N-ChannelEnhancementModePowerMOSFET

GENERALFEATURES 60V,4A,Rps(on)=85mQ@Vgs=10V. Rpsion)=100mQ@Vgs=4.5V. HighdensecelldesignforextremelylowRps(on)- Ruggedandreliable. Leadfreeproductisacquired. SOT-223package.

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

NDT3055L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

NDT3055L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    MTP3055V

  • 功能描述：

    MOSFET N-Channel FET Enhancement Mode

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
TO-220
6893
詢價
MOTOROLA
05+
原廠原裝
801
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
24+
N/A
1890
詢價
ON
23+
TO220-3
5000
原裝正品,假一罰十
 詢價
ON
2020+
TO220-3
35000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
ON
2020+
TO-220
9500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
FAIRCHILD/仙童
1948+
TO220-3
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
ON/安森美
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
MOT
2023+
TO220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多MTP3055V供應(yīng)商 更新時間2025-1-8 17:17:00

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