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PHX3055E

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopewithanelectricallyisolatedmountingtab.Thedeviceuses’trench’technologytoachievelowon-stateresistance. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX3055L

PowerMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticfull-packenvelope.Thedevicefeatureshighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforus

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PVA3055N

MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NPBF

MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NS

MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NSPBF

MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

QPA3055P

100WS-BandGaNPowerAmplifier

QORVO

Qorvo, Inc

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

SILICONN-P-NVERSAWATTTRANSISTORS DesignedforMedium-PowerLinearandSwitchingServiceinConsumer,Automotive,andIndustrialApplications

GESS

GE Solid State

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

High-Current,SiliconN-P-NVERSAWATTTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

RFD3055

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號：

    MTP3055V

  • 功能描述：

    MOSFET N-Channel FET Enhancement Mode

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ON
23+
TO-220
6893
詢價
MOTOROLA
05+
原廠原裝
801
只做全新原裝真實現(xiàn)貨供應
 詢價
24+
N/A
1890
詢價
ON
23+
TO220-3
5000
原裝正品,假一罰十
 詢價
ON
2020+
TO220-3
35000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
ON
2020+
TO-220
9500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
FAIRCHILD/仙童
1948+
TO220-3
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
ON/安森美
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
ON
24+
TO-220
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
更多MTP3055V供應商 更新時間2025-3-13 17:31:00

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