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MTD3055VLG

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MTP3055

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3055

N-CHANNEL60V-0.1ohm-12ATO-220STripFETMOSFET

N-CHANNEL60V-0.1?-12ATO-220STripFET?MOSFET ■TYPICALRDS(on)=0.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP3055E

N-CHANNEL60V-0.1ohm-12ATO-220STripFETMOSFET

N-CHANNEL60V-0.1?-12ATO-220STripFET?MOSFET ■TYPICALRDS(on)=0.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP3055E

N-CHANNEL60V-0.1Q-12ATO-220STripFET??MOSFET

N-CHANNEL60V-0.1?-12ATO-220STripFET?MOSFET ■TYPICALRDS(on)=0.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP3055E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3055EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3055V

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTP3055V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3055V

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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M
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VBsemi
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50000
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VBsemi
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10065
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M
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N/A
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更多MTD3055VLG供應(yīng)商 更新時(shí)間2025-1-21 14:30:00