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MTD6N10

POWERFIELDEFFECTTRANSISTOR,N-CHANNELENHANCEMENT-MODESILICONGATE,DPAKFORSURFACEMOUNTORINSERTIONMOUNT

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate DPAKforSurfaceMountorInsertionMount ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrealydrivers.

Motorola

Motorola, Inc

MTD6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD6N10E

TMOSPOWERFET6.0AMPERES100VOLTSRDS(on)=0.400OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

Motorola

Motorola, Inc

MTD6N10E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP6N10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate

Motorola

Motorola, Inc

PHD6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PJD6N10A

100VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJD6N10A

100VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

SSFP6N10

StarMOSTPowerMOSFET

Good-Ark

GOOD-ARK Electronics

STD6N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.35? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUG

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

UTT6N10

100V,6AN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UTT6N10Z

N-ChannelPowerMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

UTT6N10Z

100V,6AN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
MOT
24+
N/A
2142
詢價
ON
23+
TO-220F
6893
詢價
ON/安森美
23+
TO220F
15000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MICRON/鎂光
2022+
1000
原廠代理 終端免費(fèi)提供樣品
 詢價
Micron
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
Micron
23+
288-LRDIMM
36500
原裝正品現(xiàn)貨庫存QQ:2987726803
 詢價
Micron
99
詢價
MICRON.DDR4
21+
N/A
200
只做原裝正品
 詢價
micron(鎂光)
2324+
NA
78920
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口
 詢價
micron(鎂光)
21+
N/A
2583
全新原裝虧本出
 詢價
更多MTA6N10供應(yīng)商 更新時間2024-10-28 16:00:00

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