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首頁 >MRF9060>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
MRF9060	文件：237.98 Kbytes Page：12 Pages	RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs RFPowerFieldEffectTransistors N?ChannelEnhancement?ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge?signal,common?sourceamplifierapplicati	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060	文件：393.45 Kbytes Page：12 Pages	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com	Motorola Motorola, Inc	Motorola
MRF9060LR1	文件：237.98 Kbytes Page：12 Pages	RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs RFPowerFieldEffectTransistors N?ChannelEnhancement?ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge?signal,common?sourceamplifierapplicati	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060LSR1	文件：237.98 Kbytes Page：12 Pages	RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs RFPowerFieldEffectTransistors N?ChannelEnhancement?ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge?signal,common?sourceamplifierapplicati	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060LSR1	文件：417.56 Kbytes Page：12 Pages	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RFPowerFieldEffectTransistor N-ChannelEnhancement-ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge-signal,common-sourceamplifierapplicationsin	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060LSR1_08	文件：417.56 Kbytes Page：12 Pages	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RFPowerFieldEffectTransistor N-ChannelEnhancement-ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge-signal,common-sourceamplifierapplicationsin	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060MBR1	文件：422.95 Kbytes Page：12 Pages	The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com	Motorola Motorola, Inc	Motorola
MRF9060MR1	文件：422.95 Kbytes Page：12 Pages	The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com	Motorola Motorola, Inc	Motorola
MRF9060NBR1	文件：507.45 Kbytes Page：16 Pages	RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateral MOSFETsDesignedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifierapplicat	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060NR1	文件：507.45 Kbytes Page：16 Pages	RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateral MOSFETsDesignedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifierapplicat	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060R1	文件：393.45 Kbytes Page：12 Pages	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com	Motorola Motorola, Inc	Motorola
MRF9060S	文件：393.45 Kbytes Page：12 Pages	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com	Motorola Motorola, Inc	Motorola
MRF9060SR1	文件：393.45 Kbytes Page：12 Pages	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com	Motorola Motorola, Inc	Motorola
MRF9060LR1	文件：364.72 Kbytes Page：11 Pages	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060LR1_08	文件：364.72 Kbytes Page：11 Pages	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060NR1	文件：455.06 Kbytes Page：12 Pages	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060NR1_09	文件：455.06 Kbytes Page：12 Pages	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET	freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體	freescale
MRF9060LR5	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：NI-360 類別：分立半導(dǎo)體產(chǎn)品晶體管 - FET，MOSFET - 射頻描述：FET RF 65V 945MHZ NI-360	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
MRF9060LSR1	文件：100 bytes Page：1 Pages	包裝：散裝封裝/外殼：NI-360S 類別：分立半導(dǎo)體產(chǎn)品晶體管 - FET，MOSFET - 射頻描述：FET RF 65V 945MHZ NI-360S	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
MRF9060LSR5	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：NI-360S 類別：分立半導(dǎo)體產(chǎn)品晶體管 - FET，MOSFET - 射頻描述：FET RF 65V 945MHZ NI-360S	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp

詳細(xì)參數(shù)

型號(hào)：
MRF9060
制造商：
MOTOROLA
制造商全稱：
Motorola, Inc
功能描述：
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市旺財(cái)半導(dǎo)體有限公司	MRF9060	MOTOROLA/摩托羅拉	23+		1688	房間現(xiàn)貨庫存:QQ:373621633	詢價(jià)
深圳市一線半導(dǎo)體有限公司	MRF9060	MOT	24+		800		詢價(jià)
深圳市凱斯宇科技有限公司	MRF9060	MOT	2022		85	原廠原裝正品,價(jià)格超越代理	詢價(jià)
深圳市佳鑫美電子科技有限公司	MRF9060	MOTOROLA	22+	TO64	4650		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	MRF9060	MOT	23+	高頻管	280	專營高頻管模塊,全新原裝!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	MRF9060	MOT	2016+	NA	6528	只做原裝正品現(xiàn)貨!或訂貨!假一賠十!	詢價(jià)
深圳市永貝爾科技有限公司	MRF9060	FREESCALE	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市華來深電子有限公司	MRF9060	MOT	23+	N/A	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市福田區(qū)億興成電子商行	MRF9060	MOT	NA	6688	15	現(xiàn)貨庫存	詢價(jià)
深圳市近平電子有限公司	MRF9060	FREESCALE	6000	面談	19	SMD	詢價(jià)

更多MRF9060供應(yīng)商更新時(shí)間2024-11-18 10:30:00

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