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ME60N04

N-Channel 4 0-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

ME60N04T

N-Channel 40-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

N60N04VDK

40V??60A??N-channelPowerMOSFETApplication:Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04HLF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP60N04HLF

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP60N04HLFandNP60N04ILFareN-channel MOSFieldEffectTransistorsdesignedforhighcurrent switchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04ILF

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP60N04HLFandNP60N04ILFareN-channel MOSFieldEffectTransistorsdesignedforhighcurrent switchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04ILF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP60N04KUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04KUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP60N04MUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP60N04MUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04MUK

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

NP60N04MUK

MOSFIELDEFFECTTRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.3m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04MUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04MUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP60N04NUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04NUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP60N04PDK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.95mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP60N04PDK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.95m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04VDK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應商型號品牌批號封裝庫存備注價格
松木
24+
TO-252
499804
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
MATSUKI/松木
16+
TO-252
40000
全新原裝現(xiàn)貨
 詢價
M
23+
TO-252-2
10000
原裝正品,假一罰十
 詢價
M
24+
TO-252-2
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
MATSUKI/松木
2020+
TO-252
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
ME
1816+
.
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
M
23+
TO-252-
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
MATSUKI
18+
TO-252
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
MT茂鈿
20+
TO-252
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
M
2020+
TO-252-
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多ME60N04供應商 更新時間2024-11-15 15:43:00

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