首頁 >NP60N04KUG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NP60N04KUG | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
NP60N04KUG | Product Scout Automotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Old Company Name in Catalogs and Other Documents | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
MOSFIELDEFFECTTRANSISTOR Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.3m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
40V–60A–N-channelPowerMOSFETApplication:Automotive Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.95m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.95mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
40V–60A–N-channelPowerMOSFETApplication:Automotive Description TheNP60N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
40V–60A–N-channelPowerMOSFETApplication:Automotive Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
11810 |
全新原裝 |
詢價 | ||
NEC |
24+ |
TO-263 |
8866 |
詢價 | |||
NEC |
6000 |
面議 |
19 |
TO-263 |
詢價 | ||
NEC |
2023+ |
TO-263 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
NEC |
21+ |
SOT-263 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
NEC |
2022+ |
TO-263 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 | ||
NEC |
23+ |
TO-263 |
6000 |
原裝正品,支持實(shí)單 |
詢價 | ||
NEC |
24+23+ |
TO-263 |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
TO-263 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
NEC |
23+ |
NA/ |
8250 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 |
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