首頁 >NP60N04MUK>規(guī)格書列表

零件編號(hào)下載&訂購功能描述制造商&上傳企業(yè)LOGO

NP60N04MUK

MOS FIELD EFFECT TRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.3m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04MUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP60N04MUK

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

NP60N04MUK

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04MUK-S18-AY

MOS FIELD EFFECT TRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.3m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04MUK_15

MOS FIELD EFFECT TRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04NUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP60N04NUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04PDK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.95m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04PDK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.95mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP60N04VDK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP60N04VDK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04VLK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04VLK

N-channelPowerMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04VLK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP60N04VUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP60N04VUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04VUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP60N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PJD60N04

40VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJD60N04-AU

40VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
RENESAS/瑞薩
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
RENESAS/瑞薩
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
RENESAS/瑞薩
2022+
TO-220
2000
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
R
23+
TO-220
6000
原裝正品,支持實(shí)單
詢價(jià)
RENESAS/瑞薩
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價(jià)
RENESAS/瑞薩
23+
NA/
50000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
RENESAS/瑞薩
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價(jià)
RENESAS/瑞薩
22+
TO-220
12500
瑞薩全系列在售,終端可出樣品
詢價(jià)
RENESAS/瑞薩
20+
TO-220
300000
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
詢價(jià)
RENESAS/瑞薩
22+
TO-220
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
詢價(jià)
更多NP60N04MUK供應(yīng)商 更新時(shí)間2024-11-15 10:59:00