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DAM15N100B

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM15N100D

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM15N100S

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

IXFH15N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFH15N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N100P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo

IXYS

IXYS Corporation

IXFH15N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.76Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N100Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea

IXYS

IXYS Corporation

IXFK15N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXTN15N100

  • 制造商：

    IXYS Corporation

  • 功能描述：

    MOSFET N SOT-227B

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
23+
模塊
130
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
IXYS
23+
原廠原裝
1042
全新原裝現(xiàn)貨
 詢價(jià)
IXYS
23+
模塊
3562
詢價(jià)
IXYS
10+
主營(yíng)模塊
85
原裝正品,公司正品供應(yīng)
 詢價(jià)
IXYS
23+
模塊
5000
原裝正品,假一罰十
 詢價(jià)
IXYS
23+
SOT-227B
9888
專做原裝正品,假一罰百!
 詢價(jià)
IXYS
6000
面議
19
 專營(yíng)模塊
 詢價(jià)
IXYS
24+
SOT227
2000
進(jìn)口原裝現(xiàn)貨假一罰十.價(jià)格優(yōu)勢(shì).熱賣中..
 詢價(jià)
IXYS
22+
SOT227
8000
原裝正品支持實(shí)單
 詢價(jià)
IXYS
22+
SOT-5457&NBS
200
專營(yíng)模塊
 詢價(jià)
更多IXTN15N100供應(yīng)商 更新時(shí)間2025-3-10 7:57:00

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