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IXTP1N100

High Voltage MOSFET

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features ?Internationalstandardpackages ?Highvoltage,LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Flyb

IXYS

IXYS Corporation

IXTP1N100P

Polar Power MOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications

IXYS

IXYS Corporation

IXTP1N100P

isc N-Channel MOSFET Transistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤15?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-Mo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTT1N100

HighVoltageMOSFET

N-ChannelEnhancementMode AvalancheEnergyRated Features ●Internationalstandardpackages ●Highvoltage,LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Fastswitchingtimes Applications ●Switch-modeandresonant-modepowersupplies ●Flybackinverters ●DCcho

IXYS

IXYS Corporation

IXTY1N100P

PolarPowerMOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications

IXYS

IXYS Corporation

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

DESCRIPTION TheMM196isaMulti-ChipModule,MCM,incorporating6independentMOSFETdieintoaconvenientBGApackage.ThisdeviceisalsoavailableasdiscreteindividualpackagedPowermite3,seeMicrosemidatasheetUPF1N100.Thisdeviceisalsoavailableasbaredie,seeMicrosemidatasheet

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MTB1N100E

TMOSPOWERFET1.0AMPERES1000VOLTS

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM1N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP1N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXTP1N100

  • 功能描述：

    MOSFET 1.5 Amps 1000V 11 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IXYS/艾賽斯
24+
SOP-8
15
只做原廠渠道 可追溯貨源
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24+
8866
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IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IXYS
23+
TO-220-3
11846
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IXYS
24+
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16800
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EXPLORE
23+
LQFP-64
69820
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IXYS
1931+
N/A
87
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1675
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23+
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10000
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IXYS
22+
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87
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更多IXTP1N100供應(yīng)商 更新時(shí)間2025-1-25 16:36:00

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