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IXTA3N150HV

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

IXYS

IXYS Corporation

IXTH3N150

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTH3N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTJ3N150

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ3N150M

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=178A@TC=25℃ ·DrainSourceVoltage -VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V ·AvalancheRated ·FastIntrinsicDiode APPLICATIONS ·EasytoMount ·SpaceSavings ·HighPowerDensity

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTQ3N150M

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

NCE3N150

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150D

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150F

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150PF

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150T

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

STFV3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFW3N150

N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFW3N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpower

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP3N150

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP3N150

N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-263AA
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-263
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實單
 詢價
IXYS
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原裝正品，支持實單
 詢價
IXYS
20+
TO-263
800
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IXYS
2022+
TO-263-3,D2Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS
2232+
TO-263
13497
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多IXTA3N150HV供應(yīng)商 更新時間2025-1-17 17:10:00

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