首頁 >IXGH12N100AS>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerRFPowerMOSFETs VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?Ruggedpolysilicongatecellstructure ? | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFETs PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETsQClass Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ● | IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsISOPLUS247 HiPerFET?PowerMOSFETsISOPLUS247?F-Class:MegaHertzSwitching(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSw | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247QCLASS HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRated,HighdV/dtLowGateChargeandCapacitances HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackage ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?FastintrinsicRectifier Applications ?DC-DCconverters ?Synchronou | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETs VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?Ruggedpolysilicongatecellstructure ? | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號：
IXGH12N100AS
- 功能描述：
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 24A I(C) | TO-247SMD
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
IXYS |
20+ |
TO-247 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IXYS |
24+ |
TO-247 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IXYS |
24+ |
TO-247 |
1344 |
詢價 | |||
IXYS/艾賽斯 |
23+ |
TO-247 |
5540 |
公司只做原裝正品 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IXYS/艾賽斯 |
2022 |
TO-247 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
I |
TO-247 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
IXYS |
TO-247 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
I |
23+ |
TO-247 |
6000 |
原裝正品，支持實單 |
詢價 |
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