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IXFQ50N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=180mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFQ50N60P3

Polar3 HiperFET Power MOSFET

IXYS

IXYS Corporation

IXFQ50N60P3

Power MOSFET

IXYS

IXYS Corporation

IXFQ50N60X

Preliminary Technical Information

IXYS

IXYS Corporation

IXFQ50N60X

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXGH50N60A

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS?process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60AS

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS?process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGJ50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGK50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGN50N60B

HiPerFASTTMIGBT

Features ?InternationalstandardpackageSOT-227B ?Aluminiumnitrideisolation -highpowerdissipation ?Isolationvoltage3000V~ ?Veryhighcurrent,fastswitchingIGBT ?LowVCE(sat)forminimumon-stateconductionlosses ?MOSGateturn-ondrivesimplicity ?Lowcollector-to-cas

IXYS

IXYS Corporation

IXGR50N60B

HiPerFASTIGBTISOPLUS247

Features ?DCBIsolatedmountingtab ?MeetsTO-247ADpackageOutline ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on-drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?Switched-modeandresonant-modepowersupplies ?ACmoto

IXYS

IXYS Corporation

IXGT50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXRH50N60

IGBTwithReverseBlockingcapability

Features ●IGBTwithNPT(nonpunchthrough)structure ●reverseblockingcapabilityindependentfromgatevoltage -functionofseriesdiodemonolithicallyintegrated -noexternalseriesdioderequired -softreverserecovery ●positivetemperaturecoefficientofsaturationvolta

IXYS

IXYS Corporation

IXSH50N60B

ShortCircuitSOACapability

IGBTHighSpeed ShortCircuitSOACapability Features ?Internationalstandardpackage JEDECTO-247AD,andTO-247SMDforsurfacemount ?GuaranteedShortCircuitSOAcapability ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?LowVCE(sat) -forminimumon-stateconducti

IXYS

IXYS Corporation

KGF50N60KDA

KECFieldStopTrenchIGBTsofferlowswitchinglosses,highenergyefficiencyandshortcircuitruggedness.

KECKEC CORPORATION

KEC株式會社

KGT50N60KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式會社

NGTB50N60FLWG

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB50N60FWG

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    IXFQ50N60

  • 功能描述:

    MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
18+
NA
3000
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IXYS
1931+
N/A
18
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IXYS
1809+
TO-3P
326
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IXYS
22+
NA
18
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IXYS
22+
TO3P3 SC653
9000
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IXYS
21+
TO3P3 SC653
13880
公司只售原裝,支持實單
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IXYS
23+
TO3P3 SC653
9000
原裝正品,支持實單
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IXYS
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨立分銷
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HY
2022+
TO-220
6000
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Littelfuse/IXYS
23+
TO3P
7350
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更多IXFQ50N60供應(yīng)商 更新時間2024-11-2 14:15:00