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IXFN60N60

HiPerFET Power MOSFETs Single Die MOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXFQ60N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFQ60N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXGH60N60

Ultra-LowVCE(sat)IGBT

Features ?InternationalstandardpackageJEDECTO-247AD,TO-264,TO-268 ?NewgenerationHDMOSTMprocess ?LowVCE(sat)forminimumon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-ondrivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobot

IXYS

IXYS Corporation

IXGH60N60

HIGHCURRENTMOSIGBT

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IXYS

IXYS Corporation

IXGK60N60

Ultra-LowVCE(sat)IGBT

Features ?InternationalstandardpackageJEDECTO-247AD,TO-264,TO-268 ?NewgenerationHDMOSTMprocess ?LowVCE(sat)forminimumon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-ondrivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobot

IXYS

IXYS Corporation

IXGN60N60

Ultra-LowVCE(sat)IGBT

Features ●InternationalstandardpackageSOT-227B ●Aluminiumnitrideisolation -highpowerdissipation ●Isolationvoltage3000V~ ●Veryhighcurrent,fastswitchingIGBT ●LowVCE(sat)forminimumon-stateconductionlosses ●MOSGateturn-ondrivesimplicity ●Lowcollector-to-cas

IXYS

IXYS Corporation

IXGT60N60

Ultra-LowVCE(sat)IGBT

Features ?InternationalstandardpackageJEDECTO-247AD,TO-264,TO-268 ?NewgenerationHDMOSTMprocess ?LowVCE(sat)forminimumon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-ondrivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobot

IXYS

IXYS Corporation

NGTB60N60SWG

IGBT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NP60N60VDK

60V??60A??N-channelPowerMOSFETApplication:Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    IXFN60N60

  • 功能描述：

    MOSFET 600V 60A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
19+/20+
SOT-227B
1000
主打產品價格優(yōu)惠.全新原裝正品
 詢價
IXYS/艾賽斯
19+
MODULE
1290
主打模塊,大量現(xiàn)貨供應商QQ2355605126
 詢價
IXYS
23+
模塊
360
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
 詢價
IXYS
23+
原廠原裝
1091
全新原裝現(xiàn)貨
 詢價
IXYS場效應
100
原裝現(xiàn)貨,價格優(yōu)惠
 詢價
IXYS
23+
模塊
5000
原裝正品,假一罰十
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS/艾賽斯
18+
SOT227
12500
全新原裝正品,本司專業(yè)配單,大單小單都配
 詢價
IXYS
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
2018+
module
6000
全新原裝正品現(xiàn)貨,假一賠佰
 詢價
更多IXFN60N60供應商 更新時間2025-3-10 17:17:00

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