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IXFM58N20

HiPerFET Power MOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM58N20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=40mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH58N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH58N20

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH58N20Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH58N20Q

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRatedHighdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepoxi

IXYS

IXYS Corporation

IXFR58N20Q

HiPerFETPowerMOSFETsISOPLUS247Q-Class

HiPerFET?PowerMOSFETsISOPLUS247?Q-Class(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface

IXYS

IXYS Corporation

IXFT58N20

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT58N20Q

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRatedHighdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepoxi

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFM58N20

  • 制造商：

    IXYS

  • 制造商全稱：

    IXYS Corporation

  • 功能描述：

    HiPerFET Power MOSFETs

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
2022+
TO-204AE
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS/艾賽斯
23+
TO-264 PLUS
325680
原裝正品 華強現(xiàn)貨
 詢價
IXYS場效應(yīng)
100
原裝現(xiàn)貨,價格優(yōu)惠
 詢價
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
 詢價
NO
23+
MODULE
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IXYS
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS
0032+
TO-220
22
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IXY
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
IXYS
24+
TO-03
200
進口原裝正品優(yōu)勢供應(yīng)
 詢價
更多IXFM58N20供應(yīng)商 更新時間2025-3-10 14:39:00

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