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IXFH58N20

HiPerFET Power MOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH58N20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH58N20Q

HiPerFET Power MOSFETs

N-ChannelEnhancementModeAvalancheRatedHighdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepoxi

IXYS

IXYS Corporation

IXFH58N20Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFM58N20

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM58N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=40mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR58N20Q

HiPerFETPowerMOSFETsISOPLUS247Q-Class

HiPerFET?PowerMOSFETsISOPLUS247?Q-Class(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface

IXYS

IXYS Corporation

IXFT58N20

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT58N20Q

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRatedHighdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepoxi

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFH58N20

  • 功能描述：

    MOSFET 200V 58A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS/艾賽斯
22+
TO-247
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
IXYS
0428/0413
TO247
1120
全新原裝現(xiàn)貨100真實自己公司
 詢價
IXYS
24+
TO-247AD
251
詢價
IXYS
2016+
TO-247
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
IXYS場效應
100
原裝現(xiàn)貨,價格優(yōu)惠
 詢價
IXYS
23+
TO-220
5000
原裝正品,假一罰十
 詢價
IXYS
23+
TO-3P
7750
全新原裝優(yōu)勢
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
23+
TO-3P
3000
專做原裝正品,假一罰百!
 詢價
IXYS/艾賽斯
413
25
全新進口原裝現(xiàn)貨-軍工器件供應商
 詢價
更多IXFH58N20供應商 更新時間2024-12-31 18:20:00

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