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IXFN27N80Q

HiPerFET Power MOSFETs Q-Class

SingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackage ?EpoxymeetUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?IXYSadvancedlowQgprocess ?Ruggedpolysilicongatecellstructure

IXYS

IXYS Corporation

IXFK27N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK27N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFK27N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK27N80

HiPerFETTMPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFK27N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK27N80Q

HiPerFETPowerMOSFETsQ-CLASS

SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInducti

IXYS

IXYS Corporation

IXFN27N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN27N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFN27N80

HiPerFETTMPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFN27N80Q

  • 功能描述：

    MOSFET 27 Amps 800V 0.32 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
SOT-227B
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價(jià)格優(yōu)惠.全新原裝正品
 詢價(jià)
IXYS/艾賽斯
23+
SOT-227
65493
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
德國(guó)IXYS艾塞斯
23+
MOUDLE
12000
原裝正品假一罰十支持實(shí)單
 詢價(jià)
IXYS/艾賽斯
19+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
 詢價(jià)
IXYS
23+
MOSFETN-CH800V27ASOT-227
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
2018+
module
6000
全新原裝正品現(xiàn)貨,假一賠佰
 詢價(jià)
IXYS
24+
2173
公司大量全新正品 隨時(shí)可以發(fā)貨
 詢價(jià)
IXYS
24+
SOT227
269
詢價(jià)
更多IXFN27N80Q供應(yīng)商 更新時(shí)間2025-3-10 18:07:00

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