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IXFH60N20F

HiPerRFTM Power MOSFETs

HiPerRFTMPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH60N20F

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH60N20F_08

HiPerRF Power MOSFET F-Class: MegaHertz Switching

IXYS

IXYS Corporation

IXFT60N20

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiveloadswitching(UIS) ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Easytomount ?Spacesav

IXYS

IXYS Corporation

IXFT60N20F

HiPerRFPowerMOSFETF-Class:MegaHertzSwitching

IXYS

IXYS Corporation

IXTA60N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTA60N20T

N-ChannelEnhancementModeForPDPDriversAvalancheRated

N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode

IXYS

IXYS Corporation

IXTP60N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTP60N20T

N-ChannelEnhancementModeForPDPDriversAvalancheRated

N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode

IXYS

IXYS Corporation

IXTQ60N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數

  • 型號：

    IXFH60N20F

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
20+
TO-247AD
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IXYS
24+
TO-247
2100
公司大量全新現貨 隨時可以發(fā)貨
 詢價
IXYS
24+
TO-247
1499
詢價
IXYS/艾賽斯
22+
TO-247AD
6000
十年配單,只做原裝
 詢價
IXYS/艾賽斯
23+
TO-247
6000
原裝正品，支持實單
 詢價
IXYS/艾賽斯
22+
TO-247
25000
只做原裝進口現貨,專注配單
 詢價
IXYS
24+
TO-247
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
IXYS/艾賽斯
23+
TO-247
50000
全新原裝正品現貨,支持訂貨
 詢價
IXYS/艾賽斯
24+
TO-247
150
原裝現貨假一賠十
 詢價
更多IXFH60N20F供應商 更新時間2025-3-10 14:39:00

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