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IXFE44N60

HiPerFET Power MOSFETs Single Die MOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?Fastin

IXYS

IXYS Corporation

IXFK44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier

IXYS

IXYS Corporation

IXFK44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier

IXYS

IXYS Corporation

IXFK44N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFL44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

IXYS

IXYS Corporation

IXFN44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwit

IXYS

IXYS Corporation

IXFR44N60

HiPerFETTMPowerMOSFETsISOPLUS247

IXYS

IXYS Corporation

IXFX44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier

IXYS

IXYS Corporation

IXFX44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier

IXYS

IXYS Corporation

IXFX44N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MS44N60T

LowrDS(on)trenchtechnology

BWTECH

Bruckewell Technology LTD

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFE44N60

  • 功能描述：

    MOSFET 41 Amps 600V 0.13 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價(jià)格優(yōu)惠.全新原裝正品
 詢價(jià)
IXYS
23+
MOSFETN-CH600V41ASOT-227
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
IXYS
24+
12
原裝現(xiàn)貨,可開(kāi)13%稅票
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS/艾賽斯
18+
SOT227
12500
全新原裝正品,本司專業(yè)配單,大單小單都配
 詢價(jià)
IXYS
專業(yè)模塊
MODULE
8513
模塊原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
IXYS
2023+
MODULE
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
IXYS
24+
SOT227
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
 詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
IXYS
1809+
SOT-227
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
更多IXFE44N60供應(yīng)商 更新時(shí)間2025-1-9 14:07:00

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