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IXFH16N80P

PolarHV Power MOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFH16N80P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC16N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC16N80P

PolarHVHiPerFETPowerMOSFETISOPLUS220

N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFT16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFV16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFV16N80PS

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

MTY16N80E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTY16N80E

TMOSPOWERFET16AMPERES800VOLTSRDS(on)=0.50OHM

TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFH16N80P

  • 功能描述：

    MOSFET 16 Amps 800V 0.6 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
40000
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
IXYS/艾賽斯
21+
NA
1004
只做原裝,歡迎來電咨詢
 詢價(jià)
IXYS/艾賽斯
24+
TO-247
1000
只做原廠渠道 可追溯貨源
 詢價(jià)
代賣IXYS
22+
TO-247
25000
原裝現(xiàn)貨、假一賠十
 詢價(jià)
IXYS/艾賽斯
17+
TO-247
31518
原裝正品 可含稅交易
 詢價(jià)
IXYS
24+
TO-247
8866
詢價(jià)
IXYS
17+
TO-247
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
IXYS
22+23+
T0-247
34679
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
IXYS
21+
T0-247
12588
原裝正品,自己庫存 假一罰十
 詢價(jià)
更多IXFH16N80P供應(yīng)商 更新時(shí)間2025-1-1 14:14:00

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