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IS61LV6416-10T

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10T

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10T

包裝：托盤 封裝/外殼：44-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS61LV6416-10TI

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10TI

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10TL

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10TLI

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10TI-TR

包裝：托盤 封裝/外殼：44-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS61LV6416-10TL

包裝：卷帶（TR） 封裝/外殼：44-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IC61LV6416-10B

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10BI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10K

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10KI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10T

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10TI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10B

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10BI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10BI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10BLI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IS61LV6416-10T

  • 制造商：

    ISSI, Integrated Silicon Solution Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 異步

  • 存儲容量：

    1Mb（64K x 16）

  • 存儲器接口：

    并聯(lián)

  • 寫周期時間 - 字，頁：

    10ns

  • 電壓 - 供電：

    3.135V ~ 3.6V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    44-TSOP（0.400"，10.16mm 寬）

  • 供應(yīng)商器件封裝：

    44-TSOP II

  • 描述：

    IC SRAM 1MBIT PARALLEL 44TSOP II

供應(yīng)商型號品牌批號封裝庫存備注價格
ISSI
2016+
TSOP44
4000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
ICSI
24+
TSOP44
71
原廠授權(quán)代理 價格絕對優(yōu)勢
 詢價
ISSI
23+
TSOP44
98900
原廠原裝正品現(xiàn)貨!!
 詢價
ICSI
2021+
TSOP-44
6800
原廠原裝,歡迎咨詢
 詢價
ISSI
TSOP44
2238
全新原裝進口自己庫存優(yōu)勢
 詢價
ISSI?
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
ISSI
23+
44-TSOPII
9550
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
ISSI
23+
N/A
9526
詢價
ISSI
17+
TSOP
6200
100%原裝正品現(xiàn)貨
 詢價
ISSI
24+
3
原裝現(xiàn)貨假一罰十
 詢價
更多IS61LV6416-10T供應(yīng)商 更新時間2025-1-10 13:56:00

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