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IRLI530G

HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16廓 , ID=9.7A )

IRF

International Rectifier

IRLI530G

Logic-Level Gate Drive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI530G_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI530GPBF

HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16廓 , ID=9.7A )

IRF

International Rectifier

IRLI530GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI530N

HEXFETPowerMOSFET

IRF

International Rectifier

IRLI530N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLI530NPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRLI530NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRLI530NPBF

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRLS530

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=100V ●LowerRDS(ON):0.101?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLS530A

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=100V ●LowerRDS(ON):0.101?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLS530A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLW530A

ADVANCEDPOWERMOSFET

BVDSS=100V RDS(on)=0.12? ID=14A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLW530A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLWI530A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSM530

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB530

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

L-530

Inductor

RHOMBUS-IND

Rhombus Industries Inc.

L530FI

TurnlokLockingDevicesFlangedInletsOutlets

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

詳細(xì)參數(shù)

  • 型號:

    IRLI530G

  • 功能描述:

    MOSFET N-Chan 100V 9.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
99+
5000
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
IR
2015+
TO-220
19889
一級代理原裝現(xiàn)貨,特價熱賣!
詢價
IR
24+
TO-220F
75300
詢價
IR
05+
原廠原裝
19351
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價
IR
TO-220
3200
原裝長期供貨!
詢價
IR
23+
TO-220F
35890
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
IR
23+
TO220F
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
IR
21+
TO-220F
12588
原裝正品,自己庫存 假一罰十
詢價
IR
20+
TO-220F
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
更多IRLI530G供應(yīng)商 更新時間2025-1-6 14:31:00