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IRG4PF50W

INSULATED GATE BIPOLAR TRANSISTOR

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Benefits ?Lowerswitchinglossesallowmorecost-effectiveoperationandhenceefficientreplacementoflargerdieMOSFETsupto100kHz ?Ofparticularbenefitinsingle-endedconvertersandPowerSupplies150Wandhigher ?

IRF

International Rectifier

IRG4PF50W

IGBT

DESCRIPTION ·LowGateDriveRequirement ·HighCurrentHandlingCapability ·ShortCircuitCapability ·HighPowerDensity APPLICATIONS ·PowerInverters ·MotorDrives ·UPS,PFC ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRG4PF50WD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Features ?OptimizedforuseinWeldingandSwitch-ModePowerSupplyapplications ?Industrybenchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconduct

IRF

International Rectifier

IRG4PF50WDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Features ?OptimizedforuseinWeldingandSwitch-ModePowerSupplyapplications ?Industrybenchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconduct

IRF

International Rectifier

IRG4PF50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Benefits ?Lowerswitchinglossesallowmorecost-effectiveoperationandhenceefficientreplacementoflargerdieMOSFETsupto100kHz ?Ofparticularbenefitinsingle-endedconvertersandPowerSupplies150Wandhigher ?Reductionin

IRF

International Rectifier

IRG4PF50WDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PF50WDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PF50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PF50WPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PF50WD-201P

Package：TO-247-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 900V 51A 200W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    IRG4PF50W

  • 制造商：

    International Rectifier

  • 功能描述：

    IGBT TO-247

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2410+
TO-247
59000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
IR
06+
TO-247
2000
自己公司全新庫存絕對有貨
 詢價
IR
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價
IR
13+
TO-247
2708
原裝分銷
 詢價
IR
23+
TO-247
35890
詢價
IR
23+
TO-3P
7750
全新原裝優(yōu)勢
 詢價
IR
24+
原廠封裝
1250
原裝現(xiàn)貨假一罰十
 詢價
IR
2016+
TO247
6528
原裝現(xiàn)貨假一賠十
 詢價
更多IRG4PF50W供應(yīng)商 更新時間2025-1-25 16:12:00

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