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IRG4PC50S-P

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen

IRF

International Rectifier

IRG4PC50U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan

IRF

International Rectifier

IRG4PC50UD

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRG4PC50UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-pack

IRF

International Rectifier

IRG4PC50UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-pack

IRF

International Rectifier

IRG4PC50UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50UPBF

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan

IRF

International Rectifier

IRG4PC50UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

詳細參數

  • 型號:

    IRG4PC50S-P

  • 制造商:

    International Rectifier

  • 功能描述:

    IGBT, DC Collector

  • Current:

    70A, Collector Emitter Voltage

  • Vces:

    600V, Power Dissi

供應商型號品牌批號封裝庫存備注價格
IR
05+
原廠原裝
8376
只做全新原裝真實現貨供應
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
22+
TO-247
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
TO-247
8000
只做原裝現貨
詢價
IR
23+
TO-247
7000
詢價
IR
24+
TO-247-3
162
詢價
IR
23+
TO-247AC
7750
全新原裝優(yōu)勢
詢價
IR
24+
TO247
8607
原裝現貨假一罰十
詢價
Infineon
18+
NA
3302
進口原裝正品優(yōu)勢供應
詢價
NA
22+23+
New
30946
絕對原裝正品現貨,全新深圳原裝進口現貨
詢價
更多IRG4PC50S-P供應商 更新時間2025-1-25 10:32:00