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IRFR1018E

N-Channel MOSFET Transistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤8.4m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR1018EPBF

HEXFET TM Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018EPBF

High Efficiency Synchronous Rectification in SMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018ETRPBF

High Efficiency Synchronous Rectification in SMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018EPBF

High Efficiency Synchronous Rectification in SMPS

IRF

International Rectifier

IRFR1018EPBF_15

High Efficiency Synchronous Rectification in SMPS

IRF

International Rectifier

IRFU1018E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFU1018EPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

ISF1018

iscN-ChannelMOSFETTransistor

FEATURES ·Lowdrain-sourceon-resistance :RDS(ON)=0.073Ω(typ.) ·EasytocontrolGateswitching ·Enhancementmode :Vth=2.7to3.7V(VDS=10V,ID=1.5mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFR1018

  • 功能描述：

    MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-252
5620
全新原裝現(xiàn)貨,歡迎詢購!!
 詢價
IR
17+
D-PAK
31518
原裝正品 可含稅交易
 詢價
IR
2020+
TO-252
40
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
12+
1221
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
Infineon
18+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
22+23+
DPAK
16933
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
IR
2018+
TO-252
26976
代理原裝現(xiàn)貨/特價熱賣!
 詢價
更多IRFR1018供應商 更新時間2025-2-9 14:00:00

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