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IRFR1205TRPBF

Ultra Low On-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFR1205TRPBF

N-Channel 6 0-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFR1205TRR

UltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR1205TRRPBF

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFRU1205

PowerMOSFET(Vdss=55V,Rds(on)=0.027ohm,Id=44A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFU1205

PowerMOSFET(Vdss=55V,Rds(on)=0.027ohm,Id=44A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFU1205

UltraLowOn-Resistance

Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthroughholemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ?Ultr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU1205

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU1205PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFU1205PBF

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFU1205PBF

ULTRALOWON-RESISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

KERSEMI

Kersemi Electronic Co., Ltd.

IRU1205

300mAULTRALOWDROPOUTPOSITIVEADJUSTABLEANDFIXEDREGULATORS

DESCRIPTION TheIRU1205deviceisanefficientlinearvoltageregulatorwithbetterthan1initialvoltageaccuracy,verylowdropoutvoltageandverylowgroundcurrentdesignedespeciallyforhandheld,batterypoweredapplications.Otherfeaturesofthedeviceare:TTLcompatibleenable/shutdo

IRF

International Rectifier

IRU1205CL

300mAULTRALOWDROPOUTPOSITIVEADJUSTABLEANDFIXEDREGULATORS

DESCRIPTION TheIRU1205deviceisanefficientlinearvoltageregulatorwithbetterthan1initialvoltageaccuracy,verylowdropoutvoltageandverylowgroundcurrentdesignedespeciallyforhandheld,batterypoweredapplications.Otherfeaturesofthedeviceare:TTLcompatibleenable/shutdo

IRF

International Rectifier

IRU1205-XX

300mAULTRALOWDROPOUTPOSITIVEADJUSTABLEANDFIXEDREGULATORS

DESCRIPTION TheIRU1205deviceisanefficientlinearvoltageregulatorwithbetterthan1initialvoltageaccuracy,verylowdropoutvoltageandverylowgroundcurrentdesignedespeciallyforhandheld,batterypoweredapplications.Otherfeaturesofthedeviceare:TTLcompatibleenable/shutdo

IRF

International Rectifier

IS1205SA

DC-DCPowerSupplies

XPPOWER

XP Power Limited

ISA1205

DC-DCConverter

XPPOWER

XP Power Limited

ISA1205

DC-DCConverter

XPPOWER

XP Power Limited

ISE1205A

DC-DCConverter

XPPOWER

XP Power Limited

ISE1205A

ISESeriesDC-DCConverter

XPPOWER

XP Power Limited

ISF1205

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=66A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·PFCCircuits ·ACandDCMotorDrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRFR1205TRPBF

  • 功能描述：

    MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
13+
TO-252
50000
深圳市勤思達(dá)科技有限公司主營IR系列全新原裝正品,公司現(xiàn)貨供應(yīng)IRFR1205TRPBF,絕對正品,歡迎咨詢洽談。
 詢價
IR
23+
TO-252
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢價
Infineon Technologies
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IR
16+
TO-252
36000
原裝正品,優(yōu)勢庫存81
 詢價
IR
23+
D-PAK
65400
詢價
IR
2020+
TO-252
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
INFINEON/英飛凌
21+
TO-252
36800
進(jìn)口原裝現(xiàn)貨 假一賠十
 詢價
INFINEON/英飛凌
20+
TO-252
4000
進(jìn)口原裝假一賠十支持含稅
 詢價
INFINEON
22+
TO-252
10000
原裝正品!!!優(yōu)勢庫存!0755-83210901
 詢價
IR
21+
TO-252
6000
原裝正品
 詢價
更多IRFR1205TRPBF供應(yīng)商 更新時間2024-10-26 11:04:00

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