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IRFP4227PBF

PDP SWITCH

Features ?AdvancedProcessTechnology ?KeyParametersOptimizedforPDPSustain,EnergyRecoveryandPassSwitchApplications ?LowEPULSERatingtoReducePowerDissipationinPDPSustain,EnergyRecoveryandPassSwitchApplications ?LowQGforFastResponse ?HighRepetitivePeakCurren

IRF

International Rectifier

IRFP4227PBF

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-247packaging ?Uninterruptiblepowersupply ?Highspeedswitching ?Hardswitchedandhighfrequencycircuits ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP4227PBF

Advanced Process Technology

IRF

International Rectifier

IRFP4227PBF

ThinkiSemi 96Ampere,200Volt Silicon N-Channel Planar Power MOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

IRFP4227PBF_15

Advanced Process Technology

IRF

International Rectifier

IRFS4227

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS4227PBF

PDPSWITCH

Description ThisHEXFETPowerMOSFETisspecificallydesignedforSustain,EnergyRecovery&PassswitchapplicationsinPlasmaDisplayPanels. Features ●AdvancedProcessTechnology ●KeyParametersOptimizedforPDPSustain, EnergyRecoveryandPassSwitchApplications ●LowEPULSE

IRF

International Rectifier

IRFS4227PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFS4227PBF

AdvancedProcessTechnology

Description ThisHEXFETPowerMOSFETisspecificallydesignedforSustain,EnergyRecovery&PassswitchapplicationsinPlasmaDisplayPanels. Features ●AdvancedProcessTechnology ●KeyParametersOptimizedforPDPSustain, EnergyRecoveryandPassSwitchApplications ●LowEPULSE

IRF

International Rectifier

IRFS4227TRLPBF

AdvancedProcessTechnology

Description ThisHEXFETPowerMOSFETisspecificallydesignedforSustain,EnergyRecovery&PassswitchapplicationsinPlasmaDisplayPanels. Features ●AdvancedProcessTechnology ●KeyParametersOptimizedforPDPSustain, EnergyRecoveryandPassSwitchApplications ●LowEPULSE

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFP4227PBF

  • 功能描述：

    MOSFET MOSFT 200V 65A 25mOhm 70nC Qg

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-247
20540
保證進口原裝現(xiàn)貨假一賠十
 詢價
IR
24+
TO-247
20000
原裝正品現(xiàn)貨
 詢價
IR
2020+
TO-247
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
INFINEON
21+
TO247
26000
實單請給接受價
 詢價
INFINEON
22+
TO-247
12800
原裝,現(xiàn)貨
 詢價
INFINEON/IR
1907+
NA
2775
20年老字號,原裝優(yōu)勢長期供貨
 詢價
INFINEON
22+
TO-247
9550
原裝正品可支持驗貨,歡迎咨詢
 詢價
Infineon Technologies
24+
TO-247AC
30000
晶體管-分立半導體產品-原裝正品
 詢價
IR
16+
TO-247
36000
原裝正品,優(yōu)勢庫存81
 詢價
IR
23+
TO-247
65400
詢價
更多IRFP4227PBF供應商 更新時間2025-2-12 16:39:00

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