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IRFP460LCPBF

HEXFET Power MOSFET

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFP460LCPBF

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導體

IRFP460LCPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP460N

PowerMOSFET(Vdss=500V,Rds(on)max=0.24ohm,Id=20A)

SMPSMOSFET Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent EffectiveCossspecified(SeeAN1001) Applications SwitchModePowerSupply

IRF

International Rectifier

IRFP460N

PowerMOSFET

PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS

VishayVishay Siliconix

威世科技威世科技半導體

IRFP460NPBF

HEXFETPowerMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterru

IRF

International Rectifier

IRFP460NPBF

PowerMOSFET

PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS

VishayVishay Siliconix

威世科技威世科技半導體

IRFP460P

PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A)

Description ThirdGenerationHEXFET?sfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevel

IRF

International Rectifier

IRFP460PBF

Dynamicdv/dtRating,RepetitiveAvalancheRated,IsolatedCentralMountingHole,FastSwitching,EaseofParalleling,SimpleDriveRequirements,Lead

IRF

International Rectifier

IRFP460PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技威世科技半導體

IRFP460PBF

20A,500VHeatsinkN-ChannelTypePowerMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-3P

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

IRFP460PBF

N-Channel500V(D-S)SuperJunctionPowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRFP460PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFV460

REPETITIVEAVALANCHERATEDANDdv/dtRATED

IRF

International Rectifier

IRFV460

SimpleDriveRequirements

IRF

International Rectifier

IRP460A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?SwitchModePower

VishayVishay Siliconix

威世科技威世科技半導體

IRP460APBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?SwitchModePower

VishayVishay Siliconix

威世科技威世科技半導體

ISCNH460W

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=28mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ITA-460

Water-resistantFanlessIn-vehicleComputerwithIntel?8th/9thGenCore?iCPU

Features ?Intel?8th/9thGenCore?iCPU(LGA1151) ?8GBmemoryonboard,1xSO-DIMM ?Supports2xGigabitEthernet,2xUSB3.0/3.1 ?Supports2xCOM(RS232/422/485) ?Supports1xmSATA,2x2.5HDD/SSD ?Supports3xminiPCIeexpansionsocketsforintegratingWi-Fi,LTE,and GPSwire

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

ITA-460G

Water-resistantFanlessIn-vehicleAIComputerwithIntel?8th/9thGenCore?iCPU

Features ?Intel?8th/9thGenCore?isocket-typeCPU(LGA1151)withH310PCH ?8GBmemoryonboardand1xDDR4SO-DIMMsocket ?SupportMXMtypeGPUmodule ?Supports2xGigabitEthernet,2xUSB3.0/3.1 ?Supports2xCOM(RS232/422/485) ?Supports1xmSATA,2x2.5HDD/SSD ?Supports3

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

詳細參數(shù)

  • 型號：

    IRFP460LCPBF

  • 功能描述：

    MOSFET N-Chan 500V 20 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
VISHAY
23+
TO-247
20540
保證進口原裝現(xiàn)貨假一賠十
 詢價
VISHAY
2020+
TO-247
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
Vishay Siliconix
24+
TO-247AC
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
VISHAY
24+
TO-247
15000
全新原裝的現(xiàn)貨
 詢價
VISHAY原裝正品專賣價
23+
TO-247
380000
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
VISHAY
16+
TO-247
36000
原裝正品,優(yōu)勢庫存81
 詢價
VISHAY
15
TO-247
6000
原裝正品現(xiàn)貨
 詢價
VISHAY
23+
TO-247
65400
詢價
VISHAY
1458CN
TO-247
4000
原廠直銷
 詢價
VISHAY/威世
20+
TO-247
150
進口原裝假一賠十支持含稅
 詢價
更多IRFP460LCPBF供應商 更新時間2025-1-19 22:41:00

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