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IRFI620B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFI620G

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A)

DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialap

IRF

International Rectifier

IRFI620G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導體

IRFI620GPBF

HEXFET Power MOSFET

DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialap

IRF

International Rectifier

IRFI620GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導體

IRFI620G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI620G_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI620GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFS620

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS620A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數

  • 型號:

    IRFI620

  • 功能描述:

    MOSFET N-Chan 200V 4.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
VISHAY/威世
24+
TO-220F
1025
只做原廠渠道 可追溯貨源
詢價
IR
05+
原廠原裝
551
只做全新原裝真實現貨供應
詢價
IR
24+
TO-220
1050
詢價
IR
2016+
TO-220F
6528
房間原裝進口現貨假一賠十
詢價
IR
23+
TO-220F
35890
詢價
IR
23+
TO-220
8890
價格優(yōu)勢/原裝現貨/客戶至上/歡迎廣大客戶來電查詢
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
50
全新原裝 貨期兩周
詢價
VISHAY
23+
TO-220
8560
受權代理!全新原裝現貨特價熱賣!
詢價
VISHAY
22+23+
TO-220
29020
絕對原裝正品全新進口深圳現貨
詢價
更多IRFI620供應商 更新時間2025-3-14 11:04:00