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IRFR4105

PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A??

IRF

International Rectifier

IRFR4105

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤45m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR4105

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105

55VN-ChannelMOSFET

Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRFR4105PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

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IR
23+
SOT223
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IR
22+
SOT223
20000
保證原裝正品,假一陪十
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INFINEON/英飛凌
23+
SOT223
50000
全新原裝正品現(xiàn)貨,支持訂貨
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INFINEON/英飛凌
2022+
SOT-223
8000
只做原裝支持實單,有單必成。
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INFINEON/英飛凌
2022
SOT223
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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IR
21+
SOT-223
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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IR
22+
SOT223
33944
只做原裝進口現(xiàn)貨
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INFINEON/英飛凌
2023+
SOT-223
50000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
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INFINEON/英飛凌
23+
12000
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VBsemi(微碧)
23+
5000
誠信服務(wù),絕對原裝原盤
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更多IRFL4105TRPBF-CUTTAPE供應(yīng)商 更新時間2025-1-23 13:00:00