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IRFI620B中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

IRFI620B
廠商型號(hào)

IRFI620B

功能描述

200V N-Channel MOSFET

文件大小

668.58 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-29 23:03:00

IRFI620B規(guī)格書詳情

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features

? 5.0A, 200V, RDS(on) = 0.8? @VGS = 10 V

? Low gate charge ( typical 12 nC)

? Low Crss ( typical 10 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

產(chǎn)品屬性

  • 型號(hào):

    IRFI620B

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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