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IRFE9230

P-CHANNEL POWER MOSFET

VDSS-200V ID(cont)-3.6A RDS(on)0.825? FEATURES ?SURFACEMOUNT ?SMALLFOOTPRINT ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?AVALANCHEENERGYRATING ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT

SEME-LAB

Seme LAB

IRFE9230

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

BVDSS-200V RDS(on)0.80? ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt

IRF

International Rectifier

IRFE9230

Simple Drive Requirements

IRF

International Rectifier

IRFE9230_15

Simple Drive Requirements

IRF

International Rectifier

IRFF9230

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFF9230

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

200V,P-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET

IRF

International Rectifier

IRFF9230

-4.0A,-200V,0.800Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP9230

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFY9230

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRH9230

SimpleDriveRequirements

IRF

International Rectifier

IRH9230

TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.8ohm,Id=-6.5A)

200Volt,0.8?,RADHARDHEXFET InternationalRectifier’sP-ChannelRADHARDtechnologyHEXFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiationdosesashighas105Rads(Si).Underidenticalpre-andpost-radiationtestconditions,Internationa

IRF

International Rectifier

IRHE9230

SimpleDriveRequirements

IRF

International Rectifier

IRHE9230

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(LCC-18)

IRF

International Rectifier

IRHF9230

SimpleDriveRequirements

IRF

International Rectifier

IRHF9230

RADIATIONHARDENEDPOWERMOSFET

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-39) 200V,P-CHANNEL InternationalRectifier’sRAD-HardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.These

IRF

International Rectifier

IRHM9230

TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.8ohm,Id=-6.5A)

IRF

International Rectifier

IRHM9230

SimpleDriveRequirements

IRF

International Rectifier

IRHN9230

SimpleDriveRequirements

IRF

International Rectifier

IRHN9230

TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.8ohm,Id=-6.5A)

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFE9230

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET P-CH 200V 4A 18-Pin LLCC

  • 功能描述：

    TRANS MOSFET P-CH 200V 4A 18LLCC - Bulk

供應商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
18+
18-pin+LCC
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
CHINA
22+
LCC-18
640
航宇科工半導體-央企合格優(yōu)秀供方!
 詢價
22+
5000
詢價
IR
22+
LCC
6000
終端可免費供樣,支持BOM配單
 詢價
INFINEON/英飛凌
23+
LCC
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
IR
23+
LCC
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
LCC
7000
詢價
IR
24+
LCC
12320
原裝正品 力挺實單
 詢價
IR
23+
28-pinLCC
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多IRFE9230供應商 更新時間2024-12-30 16:31:00

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