IRFD121中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書
IRFD121規(guī)格書詳情
Description
These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
? 1.3A and 1.1A, 80V and 100V
? rDS(ON) = 0.30? and 0.04Ω
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFD121
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
DIP4 |
3500 |
全新原裝假一賠十 |
詢價(jià) | ||
HAR |
2020+ |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | |||
mot |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
HARRIS(哈利斯) |
23+ |
DIP4 |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價(jià) | ||
MOT |
1725+ |
DIP4 |
6528 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
IR |
23+ |
DIP-4 |
8238 |
詢價(jià) | |||
VISHAY |
22+23+ |
DIP-4 |
27001 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
22+ |
HD-1 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
VISHAY |
DIP-4 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IOR |
24+ |
DIP-4 |
184 |
詢價(jià) |
