IRFD120中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書
IRFD120規(guī)格書詳情
Description
These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
? 1.3A and 1.1A, 80V and 100V
? rDS(ON) = 0.30? and 0.04Ω
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFD120
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
13 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ON |
23+ |
DIP |
6500 |
全新原裝假一賠十 |
詢價 | ||
INTERNATIONALRECTIFIER |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
IOR |
23+ |
DIP4 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
mot |
24+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
98+ |
DIP |
33 |
詢價 | |||
IR-VISHA |
1815+ |
DIP4 |
6528 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
IR |
23+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
23+ |
TO-220 |
12800 |
專注原裝正品現(xiàn)貨特價中量大可定 |
詢價 |
