| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF9520 | 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET 6A,100V,0.600Ohm,P-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicati | Intersil Intersil Corporation | Intersil | |
IRF9520 | Fast Switching DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRF9520 | isc P-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=-6.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IRF9520 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRF9520 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
Advanced Process Technology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET POWER MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
Advanced Process Technology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFET?Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRaging ?RepetitiveAvalancheRated ?P-Channel ?175°COperatingTemperature ?Fas | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?Dynamicdv/dtRaging ?RepetitiveAvalanche | IRF International Rectifier | IRF | ||
Surface Mount DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET? Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?Dynamicdv/dtRaging ?RepetitiveAvalanche | IRF International Rectifier | IRF | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Advanced Process Technology | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào)：
IRF9520
- 功能描述：
MOSFET P-Chan 100V 6.8 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO-220AB |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
IR |
14 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | ||||
IR |
100 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠 |
詢價(jià) | ||||
IR |
24+ |
TO-220 |
3 |
詢價(jià) | |||
IR |
2015+ |
TO-220 |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
2016+ |
TO-220 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) | ||
PHI |
23+ |
SOP-8 |
12300 |
詢價(jià) | |||
IRF |
DIP |
400 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
SAMSUNG |
05+ |
原廠原裝 |
4650 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
16641 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IRF9520NPBF
- IRF9520PBF
- IRF9530
- IRF9530NSPBF
- IRF9530NSTRLPBF-CUTTAPE
- IRF9530PBF
- IRF9530STRLPBF
- IRF9540NLPBF
- IRF9540NSPBF
- IRF9540NSTRRPBF
- IRF9540PBF
- IRF9540STRLPBF
- IRF9610PBF
- IRF9620
- IRF9620SPBF
- IRF9630
- IRF9630SPBF
- IRF9640
- IRF9640PBF
- IRF9640STRLPBF
- IRF9640TU(SAM)
- IRF9910TRPBF
- IRF9952TRPBF
- IRF9953PBF
- IRF9956PBF
- IRF9Z10PBF
- IRF9Z14PBF
- IRF9Z20PBF
- IRF9Z24NSPBF
- IRF9Z24PBF
- IRF9Z24STRRPBF
- IRF9Z30PBF
- IRF9Z34NLPBF
- IRF9Z34NSPBF
- IRF9Z34NSTRLPBF-CUTTAPE
- IRF9Z34PBF
- IRF9Z34STRLPBF
- IRFB13N50APBF
- IRFB18N50KPBF
- IRFB23N15DPBF
- IRFB260NPBF
- IRFB3004PBF
- IRFB3006PBF
- IRFB3077PBF
- IRFB3206GPBF
相關(guān)庫存
更多- IRF9520NSPBF
- IRF9520SPBF
- IRF9530NPBF
- IRF9530NSTRLPBF
- IRF9530NSTRRPBF
- IRF9530SPBF
- IRF9540
- IRF9540NPBF
- IRF9540NSTRLPBF
- IRF9540NSTRRPBF-CUTTAPE
- IRF9540SPBF
- IRF9610
- IRF9610SPBF
- IRF9620PBF
- IRF9620STRLPBF
- IRF9630PBF
- IRF9630STRLPBF
- IRF9640LPBF
- IRF9640SPBF
- IRF9640STRRPBF
- IRF9910PBF
- IRF9952PBF
- IRF9952TRPBF-CUTTAPE
- IRF9953TRPBF
- IRF9956TRPBF
- IRF9Z14LPBF
- IRF9Z14SPBF
- IRF9Z24NPBF
- IRF9Z24NSTRLPBF
- IRF9Z24SPBF
- IRF9Z30
- IRF9Z34
- IRF9Z34NPBF
- IRF9Z34NSTRLPBF
- IRF9Z34NSTRRPBF
- IRF9Z34SPBF
- IRFB11N50APBF
- IRFB17N50LPBF
- IRFB20N50KPBF
- IRFB23N20DPBF
- IRFB3004GPBF
- IRFB3006GPBF
- IRFB3077GPBF
- IRFB31N20DPBF
- IRFB3206PBF
