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IRF6100

HEXFET Power MOSFET

Description Truechip-scalepackagingisavailablefromInternationalRectifier.Throughtheuseofadvancedprocessingtechniques,andauniquepackagingconcept,extremelylowon-resistanceandthehighestpowerdensitiesintheindustryhavebeenmadeavailableforbatteryandloadmanageme

IRF

International Rectifier

IRF6100PBF

HEXFET Power MOSFET

Description Truechip-scalepackagingisavailablefromInternationalRectifier.Throughtheuseofadvancedprocessingtechniques,andauniquepackagingconcept,extremelylowon-resistanceandthehighestpowerdensitiesintheindustryhavebeenmadeavailableforbatteryandloadmanagemen

IRF

International Rectifier

LDS6100

PureTouchCapacitanceTouchICFamilywithIntegratedLEDDrivers

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

LT6100

36VLowCostHighSideCurrentSenseinaSOT-23

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT6100

Precision,GainSelectableHighSideCurrentSenseAmplifier

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT6100

HighVoltage,BidirectionalCurrentSenseAmplifierLowPowerShutdown

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT6100

Precision,GainSelectableHighSideCurrentSenseAmplifier

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT6100

HighVoltage,High-SideCurrentSense

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT6100CDD

Precision,GainSelectableHighSideCurrentSenseAmplifier

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT6100HDD

Precision,GainSelectableHighSideCurrentSenseAmplifier

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT6100IDD

Precision,GainSelectableHighSideCurrentSenseAmplifier

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LUR6100

GlassPassivatedJunctionUltraFastRectifiersReverseVoltage800to1000VForwardCurrent6.0A

LRCLeshan Radio Company

樂(lè)山無(wú)線(xiàn)電樂(lè)山無(wú)線(xiàn)電股份有限公司

MAX6100

Low-Cost,Micropower,Low-Dropout,High-Output-Current,SOT23VoltageReferences

GeneralDescription TheMAX6100–MAX6107arelow-cost,low-dropout(LDO),micropowervoltagereferences.Thesethree-terminalreferencesareavailablewithoutputvoltageoptionsof1.25V,1.8V,2.048V,2.5V,3V,4.096V,4.5V,and5V.Theyfeatureaproprietarycurvature-correctioncircuitandlas

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6100EUR

PLASTICENCAPSULATEDDEVICES

DeviceDescription General TheMAX6100isalow-cost,low-dropout(LDO),micropowervoltagereferences.Thisthree-terminalreferencehasanoutputvoltageoptionof1.8V.Itfeaturesaproprietarycurvature-correctioncircuitandlaser-trimmed,thin-filmresistorsthatresultinalowtemperatu

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6100EUR-T

Low-Cost,Micropower,Low-Dropout,High-Output-Current,SOT23VoltageReferences

GeneralDescription TheMAX6100–MAX6107arelow-cost,low-dropout(LDO),micropowervoltagereferences.Thesethree-terminalreferencesareavailablewithoutputvoltageoptionsof1.25V,1.8V,2.048V,2.5V,3V,4.096V,4.5V,and5V.Theyfeatureaproprietarycurvature-correctioncircuitandlas

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MBR6100

SCHOTTKYBARRIERRECTIFIERS

FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?Lowpowerloss,highefficiency. ?Lowforwardvoltage,highcurrentcapability ?Highsurgecapacity. ?Foruseinlowvoltage,highfrequenc

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

MBR6100

6.0ASCHOTTKYBARRIERDIODE

Features ●SchottkyBarrierChip ●IdeallySuitedforAutomaticAssembly ●LowPowerLoss,HighEfficiency ●ForUseinLowVoltageApplication ●GuardRingDieConstruction ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

MBR6100CS

SchottkyDiodes

■Features ●Lowpowerloss,highefficiency. ●Lowforwrdvoltage,highcurrentcapability ●Highsurgecapacity. ●Foruseinlowvoltage,highfrequencyinverters.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

MBR6100CT

SCHOTTKYBARRIERRECTIFIERS

FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?Lowpowerloss,highefficiency. ?Lowforwardvoltage,highcurrentcapability. ?Highsurgecapacity. ?Foruseinlowvoltage,highfrequen

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

MBR6100CT

SCHOTTKYBARRIERRECTIFIERS

FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowpowerloss,highefficiency. ?Lowforwrdvoltge,highcurrentcapability ?Highsurg

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF6100

  • 功能描述：

    MOSFET P-CH 20V 5.1A FLIP-FET

  • RoHS：

    否

  • 類(lèi)別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    HEXFET®

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門(mén)

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類(lèi)型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
BGA-4
5000
原裝正品,假一罰十
 詢(xún)價(jià)
IR
23+
BGA-4
12000
全新原裝優(yōu)勢(shì)
 詢(xún)價(jià)
IR
16+
原廠(chǎng)封裝
24000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
2020+
QFN
5990
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢(xún)價(jià)
IR
24+
BGA-4
5000
只做原裝公司現(xiàn)貨
 詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
 詢(xún)價(jià)
IR
22+23+
BGA-4
28276
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
IR
23+
BGA-4
999999
原裝正品現(xiàn)貨量大可訂貨
 詢(xún)價(jià)
IR
19+
BGA-4
20000
2050
 詢(xún)價(jià)
IR
23+
BGA-4
20000
原廠(chǎng)原裝正品現(xiàn)貨
 詢(xún)價(jià)
更多IRF6100供應(yīng)商 更新時(shí)間2025-1-2 15:36:00

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