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IRF1407L

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407L

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1407LPBF

HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407LPbF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1407PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1407PBF

HEXFET?PowerMOSFET

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

IRF

International Rectifier

IRF1407S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1407S

PowerMOSFET(Vdss=75V,Rds(on)=0.0078??Id=100A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407SPBF

HEXFET?PowerMOSFET(VDSS=75V,RDS(on)=0.0078廓,ID=100A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1407SPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1407STRLPbF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

KI1407DL

P-Channel1.8-V(G-S)MOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

KS1407N

7mmADJUSTABLEIFTCOILS(II)(SHIELDED)

FRONTIER

Frontier Electronics

KS1407N

7mmAdjustableshieldedIFTCoil(II)

FRONTIER

Frontier Electronics

KS1407N-LFR

7mmAdjustableshieldedIFTCoil(II)

FRONTIER

Frontier Electronics

KSV1407

SILICONHYPERABRUPTTUNINGDIODES

TheKSV1400Seriesofhyperabruptvaractorsofferhighcapacitanceratioswithlineartuningbetween2and8volts. Theunitsareavailableoverabroadrangeofjunctioncapacitances,satisfyingalargenumberofbroadbandapplicationsthrutheVHFfrequencyband.

KNOX

Knox Semiconductor, Inc

KSV1407

LowInductance

MA-COM

M/A-COM Technology Solutions, Inc.

LB1407

AC/DCVoltageLevelMeter

FeaturesandFunctions ?TheLB1407andLB1417arebasedondBscaleandlinearscalerespectively. ?Theinputlevelisindicatedintheformofabarbymeansof7red/greenLEDs. ?TheLEDcurrentismadevariablewithanexternalresistor. ?Aninputamplifierisbuiltin. ?Awiderange

SANYOSanyo

三洋三洋電機株式會社

LTC1407

Serial12-Bit/14-Bit,3MspsSimultaneousSamplingSimultaneousSampling

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

詳細參數(shù)

  • 型號:

    IRF1407L

  • 功能描述:

    MOSFET N-CH 75V 100A TO-262

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    HEXFET®

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-262
8866
詢價
IR
05+
原廠原裝
50051
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
IR
23+
TO-262
7600
全新原裝現(xiàn)貨
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IR
20+
TO-262-3
90000
全新原裝正品/庫存充足
詢價
IR
2020+
TO-262
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
INFINEON
1503+
TO-262
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細信息,
詢價
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
詢價
更多IRF1407L供應(yīng)商 更新時間2024-10-23 14:30:00